N-channel power MOSFET featuring 500V drain-source breakdown voltage and 20A continuous drain current. This silicon metal-oxide semiconductor field-effect transistor offers a low 270mΩ drain-source on-resistance. Designed for through-hole mounting in a TO-247 package, it supports a maximum power dissipation of 280W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include an 18ns turn-on delay and a 58ns fall time.
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| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 20A |
| Current Rating | 20A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 270mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 270mR |
| Fall Time | 58ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 20.7mm |
| Input Capacitance | 4.2nF |
| Lead Free | Contains Lead |
| Length | 15.87mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 280W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Rds On Max | 270mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 110ns |
| Turn-On Delay Time | 18ns |
| DC Rated Voltage | 500V |
| Weight | 1.340411oz |
| Width | 5.31mm |
| RoHS | Not Compliant |
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