N-channel power MOSFET featuring 500V drain-source breakdown voltage and 20A continuous drain current. This silicon metal-oxide semiconductor field-effect transistor offers a low 270mΩ drain-source on-resistance. Designed for through-hole mounting in a TO-247 package, it supports a maximum power dissipation of 280W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include an 18ns turn-on delay and a 58ns fall time.
PackageTO-247-3
Current Rating20A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFP460 technical specifications.
General
Package/Case
TO-247-3
Continuous Drain Current (ID)
20A
Current Rating
20A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
270mR
Drain to Source Voltage (Vdss)
500V
Drain-source On Resistance-Max
270mR
Fall Time
58ns
Gate to Source Voltage (Vgs)
20V
Height
20.7mm
Input Capacitance
4.2nF
Lead Free
Contains Lead
Length
15.87mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
280W
Mount
Through Hole
Number of Channels
1
Package Quantity
500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Rds On Max
270mR
RoHS Compliant
No
Turn-Off Delay Time
110ns
Turn-On Delay Time
18ns
DC Rated Voltage
500V
Weight
1.340411oz
Width
5.31mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRFP460 Datasheet
Download the complete datasheet for Vishay IRFP460 to view detailed technical specifications.
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