P-channel power MOSFET featuring 100V drain-source voltage and 21A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 200mΩ drain-to-source resistance and a maximum power dissipation of 180W. Designed for through-hole mounting in a TO-247 package, it operates across a wide temperature range from -55°C to 175°C. Key switching characteristics include a 16ns turn-on delay and 34ns turn-off delay.
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Vishay IRFP9140 technical specifications.
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 21A |
| Current Rating | -21A |
| Drain to Source Resistance | 200mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 57ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 20.7mm |
| Input Capacitance | 1.4nF |
| Lead Free | Contains Lead |
| Length | 15.87mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 180W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 200mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 34ns |
| Turn-On Delay Time | 16ns |
| DC Rated Voltage | -100V |
| Weight | 1.340411oz |
| Width | 5.31mm |
| RoHS | Not CompliantNo |
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