P-channel power MOSFET featuring 100V drain-source voltage and 21A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 200mΩ drain-to-source resistance and a maximum power dissipation of 180W. Designed for through-hole mounting in a TO-247 package, it operates across a wide temperature range from -55°C to 175°C. Key switching characteristics include a 16ns turn-on delay and 34ns turn-off delay.
PackageTO-247-3
Current Rating-21A
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Vishay IRFP9140 technical specifications.
General
Package/Case
TO-247-3
Continuous Drain Current (ID)
21A
Current Rating
-21A
Drain to Source Resistance
200mR
Drain to Source Voltage (Vdss)
100V
Fall Time
57ns
Gate to Source Voltage (Vgs)
20V
Height
20.7mm
Input Capacitance
1.4nF
Lead Free
Contains Lead
Length
15.87mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
180W
Mount
Through Hole
Number of Channels
1
Package Quantity
500
Packaging
Rail/Tube
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
200mR
RoHS Compliant
No
Turn-Off Delay Time
34ns
Turn-On Delay Time
16ns
DC Rated Voltage
-100V
Weight
1.340411oz
Width
5.31mm
Compliance
RoHS
Not CompliantNo
Datasheet
Vishay IRFP9140 Datasheet
Download the complete datasheet for Vishay IRFP9140 to view detailed technical specifications.
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