P-channel power MOSFET featuring -200V drain-source breakdown voltage and 12A continuous drain current. This silicon Metal-Oxide-Semiconductor FET offers a low 500mΩ drain-source on-resistance and a maximum power dissipation of 150W. Designed for through-hole mounting in a TO-247AC package, it operates across a temperature range of -55°C to 150°C. Key switching characteristics include a 14ns turn-on delay and 38ns fall time.
PackageTO-247AC
Current Rating-12A
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Vishay IRFP9240PBF technical specifications.
General
Package/Case
TO-247AC
Continuous Drain Current (ID)
12A
Current Rating
-12A
Drain to Source Breakdown Voltage
-200V
Drain to Source Resistance
500mR
Drain to Source Voltage (Vdss)
-200V
Drain-source On Resistance-Max
500mR
Dual Supply Voltage
-200V
Fall Time
38ns
Gate to Source Voltage (Vgs)
20V
Height
20.7mm
Input Capacitance
1.2nF
Lead Free
Lead Free
Length
15.87mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
150W
Mount
Through Hole
Nominal Vgs
-4V
Number of Channels
1
Number of Elements
1
Package Quantity
500
Packaging
Rail/Tube
Polarity
P-CHANNEL
Polarization
P
Power Dissipation
150W
Radiation Hardening
No
Rds On Max
500mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Termination
Through Hole
Threshold Voltage
-4V
Turn-Off Delay Time
39ns
Turn-On Delay Time
14ns
DC Rated Voltage
-200V
Weight
1.340411oz
Width
5.31mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFP9240PBF Datasheet
Download the complete datasheet for Vishay IRFP9240PBF to view detailed technical specifications.
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