
P-channel power MOSFET featuring -200V drain-source breakdown voltage and 12A continuous drain current. This silicon Metal-Oxide-Semiconductor FET offers a low 500mΩ drain-source on-resistance and a maximum power dissipation of 150W. Designed for through-hole mounting in a TO-247AC package, it operates across a temperature range of -55°C to 150°C. Key switching characteristics include a 14ns turn-on delay and 38ns fall time.
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Vishay IRFP9240PBF technical specifications.
| Package/Case | TO-247AC |
| Continuous Drain Current (ID) | 12A |
| Current Rating | -12A |
| Drain to Source Breakdown Voltage | -200V |
| Drain to Source Resistance | 500mR |
| Drain to Source Voltage (Vdss) | -200V |
| Drain-source On Resistance-Max | 500mR |
| Dual Supply Voltage | -200V |
| Fall Time | 38ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 20.7mm |
| Input Capacitance | 1.2nF |
| Lead Free | Lead Free |
| Length | 15.87mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Through Hole |
| Nominal Vgs | -4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Polarization | P |
| Power Dissipation | 150W |
| Radiation Hardening | No |
| Rds On Max | 500mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Termination | Through Hole |
| Threshold Voltage | -4V |
| Turn-Off Delay Time | 39ns |
| Turn-On Delay Time | 14ns |
| DC Rated Voltage | -200V |
| Weight | 1.340411oz |
| Width | 5.31mm |
| RoHS | Compliant |
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