N-Channel Power MOSFET, 600V Drain-to-Source Voltage (Vdss) and 6.8A Continuous Drain Current (ID). Features 1.2 Ohm Drain-to-Source Resistance (Rds On Max) and 150W Max Power Dissipation. This silicon Metal-oxide Semiconductor FET is housed in a TO-247 package with through-hole mounting. Operates from -55°C to 150°C with a Gate-to-Source Voltage (Vgs) of 20V. Includes 1.3nF input capacitance and fast switching times with a 13ns turn-on delay.
PackageTO-247-3
Current Rating6.8A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFPC40 technical specifications.
General
Package/Case
TO-247-3
Continuous Drain Current (ID)
6.8A
Current Rating
6.8A
Drain to Source Resistance
1.2R
Drain to Source Voltage (Vdss)
600V
Fall Time
20ns
Gate to Source Voltage (Vgs)
20V
Height
20.7mm
Input Capacitance
1.3nF
Lead Free
Contains Lead
Length
15.87mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
150W
Mount
Through Hole
Number of Channels
1
Package Quantity
500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Rds On Max
1.2R
RoHS Compliant
No
Turn-Off Delay Time
55ns
Turn-On Delay Time
13ns
DC Rated Voltage
600V
Weight
1.340411oz
Width
5.31mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRFPC40 Datasheet
Download the complete datasheet for Vishay IRFPC40 to view detailed technical specifications.
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