N-Channel Power MOSFET, 600V Drain-to-Source Voltage (Vdss) and 6.8A Continuous Drain Current (ID). Features 1.2 Ohm Drain-to-Source Resistance (Rds On Max) and 150W Max Power Dissipation. This silicon Metal-oxide Semiconductor FET is housed in a TO-247 package with through-hole mounting. Operates from -55°C to 150°C with a Gate-to-Source Voltage (Vgs) of 20V. Includes 1.3nF input capacitance and fast switching times with a 13ns turn-on delay.
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Vishay IRFPC40 technical specifications.
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 6.8A |
| Current Rating | 6.8A |
| Drain to Source Resistance | 1.2R |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 20.7mm |
| Input Capacitance | 1.3nF |
| Lead Free | Contains Lead |
| Length | 15.87mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Rds On Max | 1.2R |
| RoHS Compliant | No |
| Turn-Off Delay Time | 55ns |
| Turn-On Delay Time | 13ns |
| DC Rated Voltage | 600V |
| Weight | 1.340411oz |
| Width | 5.31mm |
| RoHS | Not Compliant |
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