N-Channel Power MOSFET, 600V Drain-Source Voltage, 11A Continuous Drain Current, and 0.6 Ohm Drain-Source Resistance. Features include a 190W maximum power dissipation, 26ns fall time, and 41ns turn-off delay. This silicon Metal-oxide Semiconductor FET is housed in a TO-247-3 through-hole plastic package, operating from -55°C to 150°C. RoHS compliant and lead-free.
Vishay IRFPC50LCPBF technical specifications.
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Resistance | 600mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 26ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 20.7mm |
| Input Capacitance | 2.3nF |
| Lead Free | Lead Free |
| Length | 15.87mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 190W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 600mR |
| Resistance | 600mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 41ns |
| Turn-On Delay Time | 17ns |
| Weight | 1.340411oz |
| Width | 5.31mm |
| RoHS | Compliant |
No datasheet is available for this part.
