N-Channel Power MOSFET, 600V Vdss, 16A Continuous Drain Current, and 400mΩ Max Drain-Source On Resistance. This silicon, metal-oxide semiconductor FET features a TO-247AC package for through-hole mounting. It offers a maximum power dissipation of 280W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 17ns turn-on delay and 43ns turn-off delay.
Vishay IRFPC60LCPBF technical specifications.
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 16A |
| Drain to Source Resistance | 400mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 400mR |
| Fall Time | 38ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 20.7mm |
| Input Capacitance | 3.5nF |
| Lead Free | Lead Free |
| Length | 15.87mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 280W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 280W |
| Radiation Hardening | No |
| Rds On Max | 400mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 43ns |
| Turn-On Delay Time | 17ns |
| Weight | 1.340411oz |
| Width | 5.31mm |
| RoHS | Compliant |
No datasheet is available for this part.
