N-Channel Power MOSFET, 600V Drain-Source Voltage, 16A Continuous Drain Current, and 400mΩ Max Drain-Source On-Resistance. This silicon Metal-oxide Semiconductor FET features a TO-247-3 package for through-hole mounting, offering a maximum power dissipation of 280W. Key switching characteristics include a 19ns turn-on delay and 56ns fall time, with an input capacitance of 3.9nF. Operating across a temperature range of -55°C to 150°C, this RoHS compliant component is designed for high-power applications.
Vishay IRFPC60PBF technical specifications.
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 16A |
| Current Rating | 16A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 400mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 400mR |
| Fall Time | 56ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 20.7mm |
| Input Capacitance | 3.9nF |
| Lead Free | Lead Free |
| Length | 15.87mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 280W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Number of Channels | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 280W |
| Rds On Max | 400mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 110ns |
| Turn-On Delay Time | 19ns |
| DC Rated Voltage | 600V |
| Weight | 1.340411oz |
| Width | 5.31mm |
| RoHS | Compliant |
No datasheet is available for this part.
