N-Channel Power MOSFET, 800V breakdown voltage, 5.4A continuous drain current, and 2 Ohm drain-source on-resistance. Features a TO-247AC package for through-hole mounting, with a maximum power dissipation of 150W. Includes a nominal gate-source voltage of 4V and a maximum gate-source voltage of 20V. This silicon metal-oxide semiconductor FET offers fast switching with turn-on delay time of 16ns and fall time of 32ns.
Vishay IRFPE40PBF technical specifications.
| Package/Case | TO-247AC |
| Continuous Drain Current (ID) | 5.4A |
| Current Rating | 5.4A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 2R |
| Drain to Source Voltage (Vdss) | 800V |
| Drain-source On Resistance-Max | 2R |
| Fall Time | 32ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 20.7mm |
| Input Capacitance | 1.9nF |
| Lead Free | Lead Free |
| Length | 15.87mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 150W |
| Radiation Hardening | No |
| Rds On Max | 2R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 100ns |
| Turn-On Delay Time | 16ns |
| DC Rated Voltage | 800V |
| Weight | 1.340411oz |
| Width | 5.31mm |
| RoHS | Compliant |
No datasheet is available for this part.
