N-Channel Power MOSFET, designed for high-voltage applications. Features a 900V drain-to-source voltage and a 3.6A continuous drain current. Offers a low on-resistance of 3.7 ohms and a maximum power dissipation of 125W. This silicon Metal-oxide Semiconductor FET is housed in a TO-247-3 package for through-hole mounting. Includes fast switching characteristics with a turn-on delay of 14ns and a fall time of 30ns.
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
Power125W
Quick Jump:
Technical Specifications
Vishay IRFPF30 technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 3.6A |
| Drain to Source Resistance | 3.7R |
| Drain to Source Voltage (Vdss) | 900V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 20.7mm |
| Input Capacitance | 1.2nF |
| Length | 15.87mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 125W |
| Rds On Max | 3.7R |
| RoHS Compliant | No |
| Turn-Off Delay Time | 90ns |
| Turn-On Delay Time | 14ns |
| DC Rated Voltage | 900V |
| Weight | 1.340411oz |
| Width | 5.31mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay IRFPF30 Datasheet
Download the complete datasheet for Vishay IRFPF30 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.