N-Channel Power MOSFET, designed for high-voltage applications. Features a 900V drain-to-source voltage and a 3.6A continuous drain current. Offers a low on-resistance of 3.7 ohms and a maximum power dissipation of 125W. This silicon Metal-oxide Semiconductor FET is housed in a TO-247-3 package for through-hole mounting. Includes fast switching characteristics with a turn-on delay of 14ns and a fall time of 30ns.
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
Power125W
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Technical Specifications
Vishay IRFPF30 technical specifications.
General
Package/Case
TO-247-3
Continuous Drain Current (ID)
3.6A
Drain to Source Resistance
3.7R
Drain to Source Voltage (Vdss)
900V
Fall Time
30ns
Gate to Source Voltage (Vgs)
20V
Height
20.7mm
Input Capacitance
1.2nF
Length
15.87mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
125W
Mount
Through Hole
Number of Channels
1
Package Quantity
500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
125W
Rds On Max
3.7R
RoHS Compliant
No
Turn-Off Delay Time
90ns
Turn-On Delay Time
14ns
DC Rated Voltage
900V
Weight
1.340411oz
Width
5.31mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRFPF30 Datasheet
Download the complete datasheet for Vishay IRFPF30 to view detailed technical specifications.
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