N-Channel Power MOSFET, 900V Drain-Source Voltage (Vdss) and 4.7A Continuous Drain Current (ID). Features 2.5 Ohm maximum drain-source on-resistance (Rds On Max) and 150W maximum power dissipation. This silicon Metal-oxide Semiconductor FET is housed in a TO-247-3 package for through-hole mounting, with a 1.6nF input capacitance and 32ns fall time. Operates from -55°C to 150°C, with a nominal gate-source threshold voltage of 4V.
Vishay IRFPF40PBF technical specifications.
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 4.7A |
| Drain to Source Resistance | 2.5R |
| Drain to Source Voltage (Vdss) | 900V |
| Drain-source On Resistance-Max | 2.5R |
| Fall Time | 32ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 20.7mm |
| Input Capacitance | 1.6nF |
| Lead Free | Lead Free |
| Length | 15.87mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Number of Channels | 1 |
| Output Voltage | 800V |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Rds On Max | 2.5R |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 110ns |
| Turn-On Delay Time | 15ns |
| Weight | 1.340411oz |
| Width | 5.31mm |
| RoHS | Compliant |
No datasheet is available for this part.
