N-channel power MOSFET with 900V drain-source breakdown voltage and 6.7A continuous drain current. Features 1.6 ohm maximum drain-source on-resistance and 190W maximum power dissipation. This silicon metal-oxide semiconductor FET is housed in a TO-247AC package with through-hole mounting. Operates from -55°C to 150°C, with a gate-source voltage of 20V. Compliant with RoHS standards.
Vishay IRFPF50PBF technical specifications.
| Package/Case | TO-247AC |
| Continuous Drain Current (ID) | 6.7A |
| Current Rating | 6.7A |
| Drain to Source Breakdown Voltage | 900V |
| Drain to Source Resistance | 1.6R |
| Drain to Source Voltage (Vdss) | 900V |
| Drain-source On Resistance-Max | 1.6R |
| Fall Time | 37ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 20.7mm |
| Input Capacitance | 2.9nF |
| Lead Free | Lead Free |
| Length | 15.87mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 190W |
| Mount | Through Hole |
| Nominal Vgs | 2V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 190W |
| Radiation Hardening | No |
| Rds On Max | 1.6R |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 130ns |
| Turn-On Delay Time | 20ns |
| DC Rated Voltage | 900V |
| Weight | 1.340411oz |
| Width | 5.31mm |
| RoHS | Compliant |
No datasheet is available for this part.
