N-Channel Power MOSFET, TO-247 package, featuring 1000V drain-source voltage and 3.1A continuous drain current. Offers a low 5 Ohm drain-source on-resistance and 125W maximum power dissipation. Designed for through-hole mounting with a 20V gate-source voltage rating and 4V threshold voltage. Includes fast switching characteristics with a 12ns turn-on delay and 29ns fall time. RoHS compliant and operates from -55°C to 150°C.
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFPG30PBF technical specifications.
General
Package/Case
TO-247-3
Continuous Drain Current (ID)
3.1A
Drain to Source Resistance
5R
Drain to Source Voltage (Vdss)
1kV
Drain-source On Resistance-Max
5R
Fall Time
29ns
Gate to Source Voltage (Vgs)
20V
Height
20.7mm
Input Capacitance
980pF
Lead Free
Lead Free
Length
15.87mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
125W
Mount
Through Hole
Nominal Vgs
4V
Number of Channels
1
Package Quantity
25
Packaging
Rail/Tube
Polarity
N-CHANNEL
Rds On Max
5R
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
4V
Turn-Off Delay Time
89ns
Turn-On Delay Time
12ns
Weight
1.340411oz
Width
5.31mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFPG30PBF Datasheet
Download the complete datasheet for Vishay IRFPG30PBF to view detailed technical specifications.
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