N-Channel Power MOSFET featuring 1000V drain-source breakdown voltage and 4.3A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 3.5 ohm drain-source resistance and 150W maximum power dissipation. Designed for through-hole mounting in a TO-247AC package, it operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 15ns turn-on delay and 30ns fall time.
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Vishay IRFPG40PBF technical specifications.
| Package/Case | TO-247AC |
| Continuous Drain Current (ID) | 4.3A |
| Current Rating | 4.3A |
| Drain to Source Breakdown Voltage | 1kV |
| Drain to Source Resistance | 3.5R |
| Drain to Source Voltage (Vdss) | 1kV |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 20.7mm |
| Input Capacitance | 1.6nF |
| Lead Free | Lead Free |
| Length | 15.87mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 150W |
| Radiation Hardening | No |
| Rds On Max | 3.5R |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 100ns |
| Turn-On Delay Time | 15ns |
| DC Rated Voltage | 1kV |
| Weight | 1.340411oz |
| Width | 5.31mm |
| RoHS | Compliant |
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