Vishay
IRFPS29N60LPBF
Power Field-Effect Transistor, 29A I(D), 600V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SUPER-247, 3 PIN
PackageTO-274-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFPS29N60LPBF technical specifications.
General
Package/Case
TO-274-3
Continuous Drain Current (ID)
29A
Drain to Source Resistance
210mR
Drain to Source Voltage (Vdss)
600V
Fall Time
54ns
Gate to Source Voltage (Vgs)
30V
Height
20.3mm
Input Capacitance
6.16nF
Length
15.6mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
480W
Mount
Through Hole
Number of Channels
1
Package Quantity
500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Rds On Max
210mR
Reach SVHC Compliant
Unknown
RoHS Compliant
No
Turn-Off Delay Time
66ns
Turn-On Delay Time
34ns
Width
5mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRFPS29N60LPBF Datasheet
Download the complete datasheet for Vishay IRFPS29N60LPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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