Vishay
IRFPS30N60KPBF
Power Field-Effect Transistor, 30A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-274AA, LEAD FREE, SUPER-247, 3 PIN
PackageTO-274-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFPS30N60KPBF technical specifications.
General
| Package/Case | TO-274-3 |
| Continuous Drain Current (ID) | 30A |
| Drain to Source Resistance | 190mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 50ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 20.3mm |
| Input Capacitance | 5.87nF |
| Length | 15.6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 450W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Rds On Max | 190mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 56ns |
| Turn-On Delay Time | 29ns |
| Width | 5mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay IRFPS30N60KPBF Datasheet
Download the complete datasheet for Vishay IRFPS30N60KPBF to view detailed technical specifications.
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