Vishay
IRFPS30N60KPBF
Power Field-Effect Transistor, 30A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-274AA, LEAD FREE, SUPER-247, 3 PIN
PackageTO-274-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFPS30N60KPBF technical specifications.
General
Package/Case
TO-274-3
Continuous Drain Current (ID)
30A
Drain to Source Resistance
190mR
Drain to Source Voltage (Vdss)
600V
Fall Time
50ns
Gate to Source Voltage (Vgs)
30V
Height
20.3mm
Input Capacitance
5.87nF
Length
15.6mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
450W
Mount
Through Hole
Number of Channels
1
Package Quantity
500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Rds On Max
190mR
RoHS Compliant
No
Turn-Off Delay Time
56ns
Turn-On Delay Time
29ns
Width
5mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRFPS30N60KPBF Datasheet
Download the complete datasheet for Vishay IRFPS30N60KPBF to view detailed technical specifications.
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