Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
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Vishay IRFR014TR technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 7.7A |
| Current Rating | 7.7A |
| Drain to Source Resistance | 200mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 19ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 300pF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 25W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 200mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 13ns |
| Turn-On Delay Time | 10ns |
| DC Rated Voltage | 60V |
| RoHS | Not CompliantNo |
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