Vishay
IRFR014TR
Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
PackageTO-252-3
Current Rating7.7A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFR014TR technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
7.7A
Current Rating
7.7A
Drain to Source Resistance
200mR
Drain to Source Voltage (Vdss)
60V
Fall Time
19ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
300pF
Lead Free
Contains Lead
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
25W
Mount
Surface Mount
Number of Channels
1
Package Quantity
2000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
200mR
RoHS Compliant
No
Turn-Off Delay Time
13ns
Turn-On Delay Time
10ns
DC Rated Voltage
60V
Compliance
RoHS
Not CompliantNo
Datasheet
Vishay IRFR014TR Datasheet
Download the complete datasheet for Vishay IRFR014TR to view detailed technical specifications.
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