N-Channel Power MOSFET, 60V Drain-Source Voltage, 7.7A Continuous Drain Current, and 0.2 Ohm Drain-Source On-Resistance. This silicon, metal-oxide semiconductor FET features a TO-252AA (DPAK-3) surface-mount package, ideal for efficient power management. With a maximum power dissipation of 2.5W and operating temperatures from -55°C to 150°C, it offers fast switching speeds with turn-on delay of 10ns and fall time of 19ns. The component is RoHS compliant and supplied in tape and reel packaging.
Vishay IRFR014TRLPBF technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 7.7A |
| Drain to Source Resistance | 200mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 19ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 300pF |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 200mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 13ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.050717oz |
| Width | 6.22mm |
| RoHS | Compliant |
No datasheet is available for this part.
