N-Channel Power MOSFET, 60V Drain-Source Voltage, 14A Continuous Drain Current, and 0.1 ohm Drain-Source Resistance. This silicon Metal-Oxide Semiconductor FET features a TO-252 package for surface mounting, with a maximum power dissipation of 42W and an operating temperature range of -55°C to 150°C. Key switching characteristics include a 13ns turn-on delay, 25ns turn-off delay, and a 42ns fall time. The component is RoHS compliant and designed for single-element operation.
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Vishay IRFR020PBF technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 14A |
| Drain to Source Resistance | 100mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 42ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 640pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 42W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 100mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 13ns |
| Weight | 0.050717oz |
| Width | 6.22mm |
| RoHS | Compliant |
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