IRFR020PBF

N-Channel Power MOSFET, 60V Drain-Source Voltage, 14A Continuous Drain Current, and 0.1 ohm Drain-Source Resistance. This silicon Metal-Oxide Semiconductor FET features a TO-252 package for surface mounting, with a maximum power dissipation of 42W and an operating temperature range of -55°C to 150°C. Key switching characteristics include a 13ns turn-on delay, 25ns turn-off delay, and a 42ns fall time. The component is RoHS compliant and designed for single-element operation.