N-Channel Power MOSFET, 100V Vdss, 4.3A continuous drain current, and 0.54ohm Rds On. This silicon Metal-oxide Semiconductor FET features a TO-252AA package for surface mounting, with a maximum power dissipation of 25W. Operating temperature range spans from -55°C to 150°C, and it includes a 20V gate-to-source voltage rating.
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFR110 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
4.3A
Drain to Source Resistance
540mR
Drain to Source Voltage (Vdss)
100V
Fall Time
9.4ns
Gate to Source Voltage (Vgs)
20V
Height
2.39mm
Input Capacitance
180pF
Lead Free
Contains Lead
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
25W
Mount
Surface Mount
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Rds On Max
540mR
RoHS Compliant
No
Turn-Off Delay Time
15ns
Turn-On Delay Time
6.9ns
Weight
0.050717oz
Width
6.22mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRFR110 Datasheet
Download the complete datasheet for Vishay IRFR110 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.