N-Channel Power MOSFET, 100V Vdss, 4.3A continuous drain current, and 0.54ohm Rds On. This silicon Metal-oxide Semiconductor FET features a TO-252AA package for surface mounting, with a maximum power dissipation of 25W. Operating temperature range spans from -55°C to 150°C, and it includes a 20V gate-to-source voltage rating.
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFR110 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 4.3A |
| Drain to Source Resistance | 540mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 9.4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 180pF |
| Lead Free | Contains Lead |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 25W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Rds On Max | 540mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 6.9ns |
| Weight | 0.050717oz |
| Width | 6.22mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay IRFR110 Datasheet
Download the complete datasheet for Vishay IRFR110 to view detailed technical specifications.
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