IRFR110TRL

N-channel power MOSFET, 100V drain-source voltage, 4.3A continuous drain current, and 0.54 ohm drain-source resistance. This silicon metal-oxide semiconductor FET features a TO-252-3 surface mount package, 180pF input capacitance, and a maximum power dissipation of 25W. Operating temperature range is -55°C to 150°C, with a nominal gate-source voltage of 2V and a maximum of 20V. Turn-on delay time is 6.9ns, fall time is 9.4ns, and turn-off delay time is 15ns.