N-Channel Power MOSFET, DPAK package, offering 100V drain-source voltage and 4.3A continuous drain current. Features a low 540mΩ drain-source on-resistance at a nominal 4V gate-source voltage. This silicon, metal-oxide semiconductor FET boasts a maximum power dissipation of 2.5W and operates within a temperature range of -55°C to 150°C. Ideal for surface mount applications, it includes fast switching characteristics with turn-on delay of 6.9ns and fall time of 9.4ns. RoHS compliant and lead-free.
PackageDPAK
MountingSurface Mount
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
Vishay IRFR110TRPBF technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 4.3A |
| Drain to Source Resistance | 540mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 540mR |
| Fall Time | 9.4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 180pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 540mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 6.9ns |
| Weight | 0.050717oz |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFR110TRPBF Datasheet
Download the complete datasheet for Vishay IRFR110TRPBF to view detailed technical specifications.
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