N-Channel Power MOSFET, 100V Drain-Source Voltage, 7.7A Continuous Drain Current, and 270mΩ Drain-Source On-Resistance. This silicon Metal-Oxide Semiconductor FET features a DPAK surface-mount package, ideal for efficient power management. With a maximum power dissipation of 2.5W and fast switching times (6.8ns turn-on, 17ns fall time), it offers reliable performance across a -55°C to 150°C operating temperature range. The component is RoHS compliant and designed for demanding applications.
PackageDPAK
Voltage100V
Current77A
MountingSurface Mount
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Technical Specifications
Vishay IRFR120TRPBF technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
7.7A
Current
77A
Drain to Source Resistance
270mR
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
270mR
Fall Time
17ns
Gate to Source Voltage (Vgs)
20V
Height
2.39mm
Input Capacitance
360pF
Lead Free
Lead Free
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Nominal Vgs
2V
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2.5W
Radiation Hardening
No
Rds On Max
270mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
18ns
Turn-On Delay Time
6.8ns
Voltage
100V
Weight
0.050717oz
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFR120TRPBF Datasheet
Download the complete datasheet for Vishay IRFR120TRPBF to view detailed technical specifications.
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