N-Channel Power MOSFET, 100V Drain-Source Voltage, 7.7A Continuous Drain Current, and 270mΩ Drain-Source On-Resistance. This silicon Metal-Oxide Semiconductor FET features a DPAK surface-mount package, ideal for efficient power management. With a maximum power dissipation of 2.5W and fast switching times (6.8ns turn-on, 17ns fall time), it offers reliable performance across a -55°C to 150°C operating temperature range. The component is RoHS compliant and designed for demanding applications.
PackageDPAK
Voltage100V
Current77A
MountingSurface Mount
Quick Jump:
Technical Specifications
Vishay IRFR120TRPBF technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 7.7A |
| Current | 77A |
| Drain to Source Resistance | 270mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 270mR |
| Fall Time | 17ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 360pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | 2V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 270mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 18ns |
| Turn-On Delay Time | 6.8ns |
| Voltage | 100V |
| Weight | 0.050717oz |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFR120TRPBF Datasheet
Download the complete datasheet for Vishay IRFR120TRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.