N-Channel Power MOSFET, featuring a 200V Drain-Source Breakdown Voltage (Vdss) and a maximum continuous drain current (ID) of 2.6A. This silicon Metal-oxide Semiconductor FET offers a low drain-source on-resistance of 1.5 Ohms. Designed for surface mounting, it is housed in a DPAK package with a maximum power dissipation of 2.5W. Key switching characteristics include a turn-on delay time of 8.2ns and a fall time of 8.9ns. The component operates within a temperature range of -55°C to 150°C and is RoHS compliant.
PackageDPAK
MountingSurface Mount
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
Vishay IRFR210PBF technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 2.6A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 1.5R |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 1.5R |
| Fall Time | 8.9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 140pF |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 1.5R |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 14ns |
| Turn-On Delay Time | 8.2ns |
| DC Rated Voltage | 200V |
| Weight | 0.050717oz |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFR210PBF Datasheet
Download the complete datasheet for Vishay IRFR210PBF to view detailed technical specifications.
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