N-Channel Power MOSFET, featuring a 200V Drain-Source Breakdown Voltage (Vdss) and a maximum continuous drain current (ID) of 2.6A. This silicon Metal-oxide Semiconductor FET offers a low drain-source on-resistance of 1.5 Ohms. Designed for surface mounting, it is housed in a DPAK package with a maximum power dissipation of 2.5W. Key switching characteristics include a turn-on delay time of 8.2ns and a fall time of 8.9ns. The component operates within a temperature range of -55°C to 150°C and is RoHS compliant.
PackageDPAK
MountingSurface Mount
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
Vishay IRFR210PBF technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
2.6A
Drain to Source Breakdown Voltage
200V
Drain to Source Resistance
1.5R
Drain to Source Voltage (Vdss)
200V
Drain-source On Resistance-Max
1.5R
Fall Time
8.9ns
Gate to Source Voltage (Vgs)
20V
Height
2.39mm
Input Capacitance
140pF
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
75
Packaging
Rail/Tube
Polarity
N-CHANNEL
Polarization
N
Power Dissipation
2.5W
Radiation Hardening
No
Rds On Max
1.5R
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
4V
Turn-Off Delay Time
14ns
Turn-On Delay Time
8.2ns
DC Rated Voltage
200V
Weight
0.050717oz
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFR210PBF Datasheet
Download the complete datasheet for Vishay IRFR210PBF to view detailed technical specifications.
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