N-channel power MOSFET featuring 200V drain-source voltage and 2.6A continuous drain current. This silicon, metal-oxide semiconductor field-effect transistor offers a low 1.5-ohm drain-source on-resistance. Designed for surface mounting in a TO-252-3 package, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2.5W. Key switching characteristics include an 8.2ns turn-on delay and an 8.9ns fall time.
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Vishay IRFR210TRLPBF technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 2.6A |
| Drain to Source Resistance | 1.5R |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 1.5R |
| Fall Time | 8.9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 140pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 1.5R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 14ns |
| Turn-On Delay Time | 8.2ns |
| Weight | 0.050717oz |
| Width | 6.22mm |
| RoHS | Compliant |
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