N-Channel Power MOSFET, 200V Drain-Source Voltage (Vdss) and 4.8A Continuous Drain Current (ID). Features 800mΩ maximum Drain-Source On-Resistance (RDS(on)) and 2.5W maximum power dissipation. This silicon Metal-oxide Semiconductor FET is housed in a TO-252 DPAK package for surface mounting. Operates from -55°C to 150°C with a 20V Gate-Source Voltage (Vgs).
PackageDPAK
Resistance800mR
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFR220 technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 4.8A |
| Drain to Source Resistance | 800mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 800mR |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Lead Free | Contains Lead |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Resistance | 800mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 19ns |
| Turn-On Delay Time | 7.2ns |
| Weight | 0.050717oz |
| Width | 6.22mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay IRFR220 Datasheet
Download the complete datasheet for Vishay IRFR220 to view detailed technical specifications.
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