N-Channel Power MOSFET, DPAK package, featuring 200V drain-source breakdown voltage and 4.8A continuous drain current. Offers 800mΩ maximum drain-source on-resistance at a nominal gate-source voltage of 4V. Designed for surface mounting with a 2.5W power dissipation rating. Includes fast switching characteristics with a 7.2ns turn-on delay and 13ns fall time. Operates across a temperature range of -55°C to 150°C and is RoHS compliant.
PackageDPAK
Current Rating4.8A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFR220PBF technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
4.8A
Current Rating
4.8A
Drain to Source Breakdown Voltage
200V
Drain to Source Resistance
800mR
Drain to Source Voltage (Vdss)
200V
Drain-source On Resistance-Max
800mR
Fall Time
13ns
Gate to Source Voltage (Vgs)
20V
Height
2.39mm
Input Capacitance
260pF
Lead Free
Lead Free
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Nominal Vgs
4V
Number of Channels
1
Number of Elements
1
Package Quantity
75
Packaging
Rail/Tube
Polarity
N-CHANNEL
Polarization
N
Power Dissipation
2.5W
Radiation Hardening
No
Rds On Max
800mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
4V
Turn-Off Delay Time
19ns
Turn-On Delay Time
7.2ns
DC Rated Voltage
200V
Weight
0.050717oz
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFR220PBF Datasheet
Download the complete datasheet for Vishay IRFR220PBF to view detailed technical specifications.
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