N-Channel Power MOSFET, 250V Drain-Source Voltage (Vdss) and 3.8A Continuous Drain Current (ID). Features 1.1 Ohm maximum Drain-Source On-Resistance (Rds On) and 42W maximum power dissipation. This silicon Metal-Oxide-Semiconductor FET is housed in a TO-252 (DPAK-3) surface-mount package, offering fast switching with a 7ns turn-on delay and 20ns turn-off delay. Operating temperature range is -55°C to 150°C.
PackageTO-252-3
Current Rating3.8A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFR224 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
3.8A
Current Rating
3.8A
Drain to Source Resistance
1.1R
Drain to Source Voltage (Vdss)
250V
Fall Time
12ns
Gate to Source Voltage (Vgs)
20V
Height
2.39mm
Input Capacitance
260pF
Lead Free
Contains Lead
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
42W
Mount
Surface Mount
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Rds On Max
1.1R
RoHS Compliant
No
Turn-Off Delay Time
20ns
Turn-On Delay Time
7ns
DC Rated Voltage
250V
Weight
0.050717oz
Width
6.22mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRFR224 Datasheet
Download the complete datasheet for Vishay IRFR224 to view detailed technical specifications.
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