N-Channel Power MOSFET, 250V Drain-Source Voltage (Vdss) and 3.8A Continuous Drain Current (ID). Features 1.1 Ohm maximum Drain-Source On-Resistance (Rds On) and 42W maximum power dissipation. This silicon Metal-Oxide-Semiconductor FET is housed in a TO-252 (DPAK-3) surface-mount package, offering fast switching with a 7ns turn-on delay and 20ns turn-off delay. Operating temperature range is -55°C to 150°C.
Vishay IRFR224 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 3.8A |
| Current Rating | 3.8A |
| Drain to Source Resistance | 1.1R |
| Drain to Source Voltage (Vdss) | 250V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 260pF |
| Lead Free | Contains Lead |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 42W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Rds On Max | 1.1R |
| RoHS Compliant | No |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 7ns |
| DC Rated Voltage | 250V |
| Weight | 0.050717oz |
| Width | 6.22mm |
| RoHS | Not Compliant |
No datasheet is available for this part.
