N-Channel Power MOSFET, 250V Drain-Source Voltage, 3.8A Continuous Drain Current, 1.1 Ohm Drain-Source Resistance. Features include 7ns turn-on delay, 20ns turn-off delay, and 12ns fall time. This silicon Metal-Oxide-Semiconductor FET is housed in a TO-252 DPAK-3 surface-mount package, offering a maximum power dissipation of 42W and an operating temperature range of -55°C to 150°C.
PackageTO-252-3
Current Rating3.8A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFR224TRL technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
3.8A
Current Rating
3.8A
Drain to Source Resistance
1.1R
Drain to Source Voltage (Vdss)
250V
Fall Time
12ns
Gate to Source Voltage (Vgs)
20V
Height
2.39mm
Input Capacitance
260pF
Lead Free
Contains Lead
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
42W
Mount
Surface Mount
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Rds On Max
1.1R
RoHS Compliant
No
Turn-Off Delay Time
20ns
Turn-On Delay Time
7ns
DC Rated Voltage
250V
Weight
0.050717oz
Width
6.22mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRFR224TRL Datasheet
Download the complete datasheet for Vishay IRFR224TRL to view detailed technical specifications.
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