N-Channel Power MOSFET, 500V Vdss, 2.4A continuous drain current, and 3 Ohm drain-source on-resistance. Features 8ns turn-on delay and 33ns turn-off delay, with a 16ns fall time. Operates from -55°C to 150°C with a maximum power dissipation of 2.5W. Packaged in a TO-252AA (DPAK) surface-mount package, this silicon Metal-oxide Semiconductor FET is RoHS compliant.
PackageDPAK
MountingSurface Mount
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
Vishay IRFR420TRLPBF technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
2.4A
Drain to Source Resistance
3R
Drain to Source Voltage (Vdss)
500V
Drain-source On Resistance-Max
3R
Fall Time
16ns
Gate to Source Voltage (Vgs)
20V
Height
2.39mm
Input Capacitance
360pF
Lead Free
Lead Free
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Nominal Vgs
2V
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2.5W
Radiation Hardening
No
Rds On Max
3R
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Turn-Off Delay Time
33ns
Turn-On Delay Time
8ns
Weight
0.050717oz
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFR420TRLPBF Datasheet
Download the complete datasheet for Vishay IRFR420TRLPBF to view detailed technical specifications.
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