Vishay
IRFR9110
Power Field-Effect Transistor, 3.1A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
PackageTO-252-3
Current Rating-3.1A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay IRFR9110 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
3.1A
Current Rating
-3.1A
Drain to Source Breakdown Voltage
-100V
Drain to Source Resistance
1.2R
Drain to Source Voltage (Vdss)
100V
Fall Time
17ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
200pF
Lead Free
Contains Lead
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
25W
Mount
Surface Mount
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
P-CHANNEL
Rds On Max
1.2R
RoHS Compliant
No
Turn-Off Delay Time
15ns
Turn-On Delay Time
10ns
DC Rated Voltage
-100V
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRFR9110 Datasheet
Download the complete datasheet for Vishay IRFR9110 to view detailed technical specifications.
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