Power Field-Effect Transistor, 3.1A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
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Vishay IRFR9110 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 3.1A |
| Current Rating | -3.1A |
| Drain to Source Breakdown Voltage | -100V |
| Drain to Source Resistance | 1.2R |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 17ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 200pF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 25W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Rds On Max | 1.2R |
| RoHS Compliant | No |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 10ns |
| DC Rated Voltage | -100V |
| RoHS | Not Compliant |
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