P-channel power MOSFET with 100V drain-source voltage and 5.6A continuous drain current. Features 600mΩ maximum drain-source on-resistance and 2.5W maximum power dissipation. This silicon Metal-oxide Semiconductor FET is housed in a surface-mount DPAK package, offering fast switching speeds with turn-on delay of 9.5ns and fall time of 25ns. Operates across a wide temperature range from -55°C to 150°C and is RoHS compliant.
Vishay IRFR9120PBF technical specifications.
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 5.6A |
| Current | 56A |
| Drain to Source Resistance | 600mR |
| Drain to Source Voltage (Vdss) | -100V |
| Drain-source On Resistance-Max | 600mR |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 390pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 600mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | -4V |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 9.5ns |
| Voltage | 100V |
| Weight | 0.050717oz |
| Width | 6.22mm |
| RoHS | Compliant |
No datasheet is available for this part.
