P-channel MOSFET, 100V drain-source voltage, 5.6A continuous drain current, and 600mΩ maximum drain-source on-resistance. This silicon, metal-oxide semiconductor FET features a TO-252 DPAK package for surface mounting. Operating temperature range is -55°C to 150°C with a maximum power dissipation of 2.5W. Includes 9.5ns turn-on delay and 21ns turn-off delay.
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Vishay IRFR9120TRPBF technical specifications.
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 5.6A |
| Current | 56A |
| Drain to Source Resistance | 600mR |
| Drain to Source Voltage (Vdss) | -100V |
| Drain-source On Resistance-Max | 600mR |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 390pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | -2V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 600mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | -4V |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 9.5ns |
| Voltage | 100V |
| Weight | 0.050717oz |
| Width | 6.22mm |
| RoHS | Compliant |
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