P-channel MOSFET, 100V drain-source voltage, 5.6A continuous drain current, and 600mΩ maximum drain-source on-resistance. This silicon, metal-oxide semiconductor FET features a TO-252 DPAK package for surface mounting. Operating temperature range is -55°C to 150°C with a maximum power dissipation of 2.5W. Includes 9.5ns turn-on delay and 21ns turn-off delay.
PackageDPAK
Voltage100V
Current56A
MountingSurface Mount
Quick Jump:
Technical Specifications
Vishay IRFR9120TRPBF technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
5.6A
Current
56A
Drain to Source Resistance
600mR
Drain to Source Voltage (Vdss)
-100V
Drain-source On Resistance-Max
600mR
Fall Time
25ns
Gate to Source Voltage (Vgs)
20V
Height
2.39mm
Input Capacitance
390pF
Lead Free
Lead Free
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Nominal Vgs
-2V
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
2.5W
Radiation Hardening
No
Rds On Max
600mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
-4V
Turn-Off Delay Time
21ns
Turn-On Delay Time
9.5ns
Voltage
100V
Weight
0.050717oz
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFR9120TRPBF Datasheet
Download the complete datasheet for Vishay IRFR9120TRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
