P-channel power MOSFET featuring 200V drain-source voltage and 3.6A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 1.5 ohm drain-source on-resistance. Designed for surface mounting in a TO-252 package, it operates from -55°C to 150°C with a maximum power dissipation of 42W. Key switching characteristics include an 8.8ns turn-on delay and a 7.3ns turn-off delay.
Vishay IRFR9220TRLPBF technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 3.6A |
| Drain to Source Resistance | 1.5R |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 1.5R |
| Fall Time | 19ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 340pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 42W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 1.5R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 7.3ns |
| Turn-On Delay Time | 8.8ns |
| Weight | 0.050717oz |
| Width | 6.22mm |
| RoHS | Compliant |
No datasheet is available for this part.
