P-channel power MOSFET, 400V drain-source voltage, 1.8A continuous drain current, and 7Ω drain-source resistance. Features include 270pF input capacitance, 24ns fall time, 25ns turn-off delay, and 11ns turn-on delay. This silicon metal-oxide semiconductor FET is housed in a TO-252-3 surface-mount package with a maximum power dissipation of 50W and an operating temperature range of -55°C to 150°C.
PackageTO-252-3
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay IRFR9310TR technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 1.8A |
| Drain to Source Resistance | 7R |
| Drain to Source Voltage (Vdss) | 400V |
| Fall Time | 24ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 270pF |
| Lead Free | Contains Lead |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Rds On Max | 7R |
| RoHS Compliant | No |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 11ns |
| Weight | 0.050717oz |
| Width | 6.22mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay IRFR9310TR Datasheet
Download the complete datasheet for Vishay IRFR9310TR to view detailed technical specifications.
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