Vishay
IRFRC20
Power Field-Effect Transistor, 2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
Power2.5W
Quick Jump:
Technical Specifications
Vishay IRFRC20 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
2A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
4.4R
Drain to Source Voltage (Vdss)
600V
Fall Time
25ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
350pF
Lead Free
Contains Lead
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
42W
Mount
Surface Mount
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
2.5W
Rds On Max
4.4R
RoHS Compliant
No
Turn-Off Delay Time
30ns
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRFRC20 Datasheet
Download the complete datasheet for Vishay IRFRC20 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.