N-Channel Power MOSFET, featuring a 600V drain-source voltage and 2A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 4.4-ohm drain-source resistance (Rds On Max) and a maximum power dissipation of 42W. Designed for surface mounting in a TO-252-3 package, it operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 10ns turn-on delay, 30ns turn-off delay, and a 25ns fall time, with an input capacitance of 350pF.
Vishay IRFRC20TR technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 2A |
| Current Rating | 2A |
| Drain to Source Resistance | 4.4R |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 350pF |
| Lead Free | Contains Lead |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 42W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 4.4R |
| RoHS Compliant | No |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 10ns |
| DC Rated Voltage | 600V |
| Weight | 0.050717oz |
| Width | 6.22mm |
| RoHS | Not Compliant |
No datasheet is available for this part.
