N-Channel Power MOSFET, 500V Vdss, 11A continuous drain current (ID), and 0.52Ω Rds On. Features 170W power dissipation, 1.423nF input capacitance, and fast switching times with 14ns turn-on delay and 28ns fall time. Designed for surface mounting in a D2PAK package, operating from -55°C to 150°C. This silicon, metal-oxide semiconductor FET is RoHS compliant and lead-free.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power170W
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Technical Specifications
Vishay IRFS11N50APBF technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Resistance | 520mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 28ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 4.83mm |
| Input Capacitance | 1.423nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 170W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 170W |
| Rds On Max | 520mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 32ns |
| Turn-On Delay Time | 14ns |
| Weight | 0.050717oz |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFS11N50APBF Datasheet
Download the complete datasheet for Vishay IRFS11N50APBF to view detailed technical specifications.
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