N-channel power MOSFET with 60V drain-source voltage and 7.7A continuous drain current. Features 200mΩ maximum drain-source on-resistance and 4V threshold voltage. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2.5W. Packaged in a TO-251 (IPAK-3) through-hole mount with lead-free construction. Includes 10ns turn-on delay, 13ns turn-off delay, and 19ns fall time.
PackageTO-251-3
MountingThrough Hole
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
Vishay IRFU014PBF technical specifications.
General
Package/Case
TO-251-3
Continuous Drain Current (ID)
7.7A
Drain to Source Resistance
200mR
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
200mR
Fall Time
19ns
Gate to Source Voltage (Vgs)
20V
Height
6.22mm
Input Capacitance
300pF
Lead Free
Lead Free
Lead Length
9.65mm
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
2.5W
Radiation Hardening
No
Rds On Max
200mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
4V
Turn-Off Delay Time
13ns
Turn-On Delay Time
10ns
Weight
0.01164oz
Width
2.39mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFU014PBF Datasheet
Download the complete datasheet for Vishay IRFU014PBF to view detailed technical specifications.
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