Vishay
IRFU024
Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, IPAK-3
PackageTO-251AA
Current Rating14A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFU024 technical specifications.
General
Package/Case
TO-251AA
Continuous Drain Current (ID)
14A
Current Rating
14A
Drain to Source Resistance
100mR
Drain to Source Voltage (Vdss)
60V
Fall Time
42ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
640pF
Lead Free
Contains Lead
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
42W
Mount
Through Hole
Package Quantity
75
Packaging
Rail/Tube
Polarity
N-CHANNEL
Rds On Max
100mR
RoHS Compliant
No
Turn-Off Delay Time
25ns
Turn-On Delay Time
13ns
DC Rated Voltage
60V
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRFU024 Datasheet
Download the complete datasheet for Vishay IRFU024 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.