IRFU024PBF

N-Channel Power MOSFET, 60V Vdss, 14A Continuous Drain Current, and 100mR Drain-Source On-Resistance. Features include a 4V threshold voltage, 640pF input capacitance, and fast switching times with a 13ns turn-on delay and 25ns turn-off delay. This silicon Metal-oxide Semiconductor FET is housed in a TO-251 package, suitable for through-hole mounting, and operates within a temperature range of -55°C to 150°C. RoHS compliant and lead-free.