Vishay
IRFU110
Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3
PackageTO-251AA
Current Rating4.7A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFU110 technical specifications.
General
Package/Case
TO-251AA
Continuous Drain Current (ID)
4.3A
Current Rating
4.7A
Drain to Source Resistance
540mR
Drain to Source Voltage (Vdss)
100V
Fall Time
9.4ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
180pF
Lead Free
Contains Lead
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
25W
Mount
Through Hole
Package Quantity
75
Packaging
Rail/Tube
Polarity
N-CHANNEL
Rds On Max
540mR
RoHS Compliant
No
Turn-Off Delay Time
15ns
Turn-On Delay Time
6.9ns
DC Rated Voltage
100V
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRFU110 Datasheet
Download the complete datasheet for Vishay IRFU110 to view detailed technical specifications.
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