N-Channel Power MOSFET, TO-251 package, featuring 100V drain-source voltage and 4.3A continuous drain current. Offers a maximum drain-source on-resistance of 540mΩ. Operates with a 4V threshold voltage and 20V gate-source voltage, with typical switching times including a 6.9ns turn-on delay and 9.4ns fall time. Maximum power dissipation is 25W, with a maximum operating temperature of 150°C. This component is RoHS compliant.
PackageTO-251-3
MountingThrough Hole
PolarityN-CHANNEL
Power25W
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Technical Specifications
Vishay IRFU110PBF technical specifications.
General
Package/Case
TO-251-3
Continuous Drain Current (ID)
4.3A
Drain to Source Resistance
540mR
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
540mR
Fall Time
9.4ns
Gate to Source Voltage (Vgs)
20V
Height
6.22mm
Input Capacitance
180pF
Lead Free
Lead Free
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
25W
Radiation Hardening
No
Rds On Max
540mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
4V
Turn-Off Delay Time
15ns
Turn-On Delay Time
6.9ns
Weight
0.01164oz
Width
2.38mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFU110PBF Datasheet
Download the complete datasheet for Vishay IRFU110PBF to view detailed technical specifications.
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