IRFU120PBF

N-Channel Power MOSFET, 100V Vdss, 7.7A Continuous Drain Current (ID), and 270mR Drain-Source On-Resistance. Features include a 4V nominal gate-source threshold voltage, 360pF input capacitance, and fast switching times with a 6.8ns turn-on delay and 17ns fall time. This silicon metal-oxide semiconductor FET is housed in a TO-251AA package with through-hole mounting and a maximum power dissipation of 2.5W. It operates within a temperature range of -55°C to 150°C and is RoHS compliant.