N-Channel Power MOSFET, 100V Vdss, 7.7A Continuous Drain Current (ID), and 270mR Drain-Source On-Resistance. Features include a 4V nominal gate-source threshold voltage, 360pF input capacitance, and fast switching times with a 6.8ns turn-on delay and 17ns fall time. This silicon metal-oxide semiconductor FET is housed in a TO-251AA package with through-hole mounting and a maximum power dissipation of 2.5W. It operates within a temperature range of -55°C to 150°C and is RoHS compliant.
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Vishay IRFU120PBF technical specifications.
| Package/Case | TO-251AA |
| Continuous Drain Current (ID) | 7.7A |
| Drain to Source Resistance | 270mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 270mR |
| Fall Time | 17ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 6.22mm |
| Input Capacitance | 360pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 270mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 18ns |
| Turn-On Delay Time | 6.8ns |
| Weight | 0.01164oz |
| Width | 2.39mm |
| RoHS | Compliant |
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