N-channel power MOSFET featuring 200V drain-source voltage and 2.6A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 1.5 ohm drain-source on-resistance. Designed for through-hole mounting in a TO-251 package, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2.5W. Key switching characteristics include an 8.2ns turn-on delay and 8.9ns fall time.
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| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 2.6A |
| Drain to Source Resistance | 1.5R |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 1.5R |
| Fall Time | 8.9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 6.22mm |
| Input Capacitance | 140pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 1.5R |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 14ns |
| Turn-On Delay Time | 8.2ns |
| Weight | 0.01164oz |
| Width | 2.38mm |
| RoHS | Compliant |
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