N-channel power MOSFET featuring 200V drain-source voltage and 2.6A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 1.5 ohm drain-source on-resistance. Designed for through-hole mounting in a TO-251 package, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2.5W. Key switching characteristics include an 8.2ns turn-on delay and 8.9ns fall time.
PackageTO-251-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFU210PBF technical specifications.
General
Package/Case
TO-251-3
Continuous Drain Current (ID)
2.6A
Drain to Source Resistance
1.5R
Drain to Source Voltage (Vdss)
200V
Drain-source On Resistance-Max
1.5R
Fall Time
8.9ns
Gate to Source Voltage (Vgs)
20V
Height
6.22mm
Input Capacitance
140pF
Lead Free
Lead Free
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Through Hole
Number of Channels
1
Package Quantity
3000
Packaging
Rail/Tube
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
1.5R
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
4V
Turn-Off Delay Time
14ns
Turn-On Delay Time
8.2ns
Weight
0.01164oz
Width
2.38mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFU210PBF Datasheet
Download the complete datasheet for Vishay IRFU210PBF to view detailed technical specifications.
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