N-Channel Power MOSFET, featuring a 250V Drain-Source Voltage (Vdss) and 2.2A Continuous Drain Current (ID). This silicon, metal-oxide semiconductor FET offers a low 2-ohm Drain-Source On-Resistance (Rds On Max) and a 4V threshold voltage. Designed for through-hole mounting in a TO-251AA package, it boasts a maximum power dissipation of 2.5W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 7ns turn-on delay and fall time, with an input capacitance of 140pF.
PackageTO-251-3
Resistance2R
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFU214PBF technical specifications.
General
Package/Case
TO-251-3
Continuous Drain Current (ID)
2.2A
Drain to Source Resistance
2R
Drain to Source Voltage (Vdss)
250V
Drain-source On Resistance-Max
2R
Fall Time
7ns
Gate to Source Voltage (Vgs)
20V
Height
6.22mm
Input Capacitance
140pF
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Through Hole
Number of Channels
1
Package Quantity
3000
Packaging
Rail/Tube
Polarity
N-CHANNEL
Rds On Max
2R
Reach SVHC Compliant
Unknown
Resistance
2R
RoHS Compliant
Yes
Threshold Voltage
4V
Turn-Off Delay Time
16ns
Turn-On Delay Time
7ns
Weight
0.01164oz
Width
2.39mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFU214PBF Datasheet
Download the complete datasheet for Vishay IRFU214PBF to view detailed technical specifications.
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