N-Channel Power MOSFET, featuring a 250V Drain-Source Voltage (Vdss) and 2.2A Continuous Drain Current (ID). This silicon, metal-oxide semiconductor FET offers a low 2-ohm Drain-Source On-Resistance (Rds On Max) and a 4V threshold voltage. Designed for through-hole mounting in a TO-251AA package, it boasts a maximum power dissipation of 2.5W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 7ns turn-on delay and fall time, with an input capacitance of 140pF.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Vishay IRFU214PBF datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Vishay IRFU214PBF technical specifications.
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 2.2A |
| Drain to Source Resistance | 2R |
| Drain to Source Voltage (Vdss) | 250V |
| Drain-source On Resistance-Max | 2R |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 6.22mm |
| Input Capacitance | 140pF |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Rds On Max | 2R |
| Reach SVHC Compliant | Unknown |
| Resistance | 2R |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 16ns |
| Turn-On Delay Time | 7ns |
| Weight | 0.01164oz |
| Width | 2.39mm |
| RoHS | Compliant |
Download the complete datasheet for Vishay IRFU214PBF to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
