N-Channel Power MOSFET, featuring a 250V Drain-Source Voltage (Vdss) and 2.2A Continuous Drain Current (ID). This silicon, metal-oxide semiconductor FET offers a low 2-ohm Drain-Source On-Resistance (Rds On Max) and a 4V threshold voltage. Designed for through-hole mounting in a TO-251AA package, it boasts a maximum power dissipation of 2.5W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 7ns turn-on delay and fall time, with an input capacitance of 140pF.
PackageTO-251-3
Resistance2R
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFU214PBF technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 2.2A |
| Drain to Source Resistance | 2R |
| Drain to Source Voltage (Vdss) | 250V |
| Drain-source On Resistance-Max | 2R |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 6.22mm |
| Input Capacitance | 140pF |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Rds On Max | 2R |
| Reach SVHC Compliant | Unknown |
| Resistance | 2R |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 16ns |
| Turn-On Delay Time | 7ns |
| Weight | 0.01164oz |
| Width | 2.39mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFU214PBF Datasheet
Download the complete datasheet for Vishay IRFU214PBF to view detailed technical specifications.
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