N-Channel Power MOSFET, 400V Drain-Source Voltage, 1.7A Continuous Drain Current, and 3.6 Ohm Rds On. This single-element silicon Metal-Oxide-Semiconductor FET features a TO-251 IPAK-3 package for through-hole mounting. Key electrical characteristics include a 20V Gate-Source Voltage, 170pF input capacitance, 7.9ns turn-on delay, 11ns fall time, and 21ns turn-off delay. Maximum power dissipation is 25W, with an operating temperature range of -55°C to 150°C.
PackageTO-251-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFU310 technical specifications.
General
Package/Case
TO-251-3
Continuous Drain Current (ID)
1.7A
Drain to Source Resistance
3.6R
Drain to Source Voltage (Vdss)
400V
Fall Time
11ns
Gate to Source Voltage (Vgs)
20V
Height
6.22mm
Input Capacitance
170pF
Lead Free
Contains Lead
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
25W
Mount
Through Hole
Number of Channels
1
Package Quantity
75
Packaging
Rail/Tube
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
3.6R
RoHS Compliant
No
Turn-Off Delay Time
21ns
Turn-On Delay Time
7.9ns
Weight
0.01164oz
Width
2.39mm
Compliance
RoHS
Not CompliantNo
Datasheet
Vishay IRFU310 Datasheet
Download the complete datasheet for Vishay IRFU310 to view detailed technical specifications.
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