N-Channel Power MOSFET, 400V Drain-Source Voltage, 1.7A Continuous Drain Current, and 3.6 Ohm Rds On. This single-element silicon Metal-Oxide-Semiconductor FET features a TO-251 IPAK-3 package for through-hole mounting. Key electrical characteristics include a 20V Gate-Source Voltage, 170pF input capacitance, 7.9ns turn-on delay, 11ns fall time, and 21ns turn-off delay. Maximum power dissipation is 25W, with an operating temperature range of -55°C to 150°C.
PackageTO-251-3
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Vishay IRFU310 technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 1.7A |
| Drain to Source Resistance | 3.6R |
| Drain to Source Voltage (Vdss) | 400V |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 6.22mm |
| Input Capacitance | 170pF |
| Lead Free | Contains Lead |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 25W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 3.6R |
| RoHS Compliant | No |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 7.9ns |
| Weight | 0.01164oz |
| Width | 2.39mm |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Vishay IRFU310 Datasheet
Download the complete datasheet for Vishay IRFU310 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.