N-Channel Power MOSFET, 400V Drain-Source Voltage, 1.7A Continuous Drain Current, and 3.6 Ohm Rds On. This single-element silicon Metal-Oxide-Semiconductor FET features a TO-251 IPAK-3 package for through-hole mounting. Key electrical characteristics include a 20V Gate-Source Voltage, 170pF input capacitance, 7.9ns turn-on delay, 11ns fall time, and 21ns turn-off delay. Maximum power dissipation is 25W, with an operating temperature range of -55°C to 150°C.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Vishay IRFU310 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 1.7A |
| Drain to Source Resistance | 3.6R |
| Drain to Source Voltage (Vdss) | 400V |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 6.22mm |
| Input Capacitance | 170pF |
| Lead Free | Contains Lead |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 25W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 3.6R |
| RoHS Compliant | No |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 7.9ns |
| Weight | 0.01164oz |
| Width | 2.39mm |
| RoHS | Not CompliantNo |
Download the complete datasheet for Vishay IRFU310 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
