IRFU9110

P-channel power MOSFET featuring 100V drain-to-source voltage and 3.1A continuous drain current. Offers 1.2Ω drain-to-source resistance (Rds On Max) and a maximum power dissipation of 25W. This single-element silicon FET operates with a gate-to-source voltage of 20V and exhibits typical turn-on delay of 10ns and fall time of 17ns. Packaged in a TO-251-3 (IPAK-3) through-hole mount with dimensions of 6.73mm length, 2.38mm width, and 6.22mm height.