P-channel power MOSFET featuring 100V drain-to-source voltage and 3.1A continuous drain current. Offers 1.2Ω drain-to-source resistance (Rds On Max) and a maximum power dissipation of 25W. This single-element silicon FET operates with a gate-to-source voltage of 20V and exhibits typical turn-on delay of 10ns and fall time of 17ns. Packaged in a TO-251-3 (IPAK-3) through-hole mount with dimensions of 6.73mm length, 2.38mm width, and 6.22mm height.
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Vishay IRFU9110 technical specifications.
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 3.1A |
| Drain to Source Resistance | 1.2R |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 17ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 6.22mm |
| Input Capacitance | 200pF |
| Lead Free | Contains Lead |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 25W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 1.2R |
| RoHS Compliant | No |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.01164oz |
| Width | 2.38mm |
| RoHS | Not CompliantNo |
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