P-channel Power MOSFET, 100V drain-source voltage, 3.1A continuous drain current, and 1.2 Ohm max drain-source on-resistance. Features include 20V gate-source voltage, 10ns turn-on delay, 15ns turn-off delay, and 17ns fall time. This through-hole component is housed in a TO-251-3 (IPAK) package, offering 2.5W max power dissipation and operating from -55°C to 150°C. RoHS compliant and lead-free.
PackageTO-251-3
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Vishay IRFU9110PBF technical specifications.
General
Package/Case
TO-251-3
Continuous Drain Current (ID)
3.1A
Drain to Source Resistance
1.2R
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
1.2R
Fall Time
17ns
Gate to Source Voltage (Vgs)
20V
Height
6.22mm
Input Capacitance
200pF
Lead Free
Lead Free
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Through Hole
Number of Channels
1
Package Quantity
3000
Packaging
Rail/Tube
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
1.2R
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
-2V
Turn-Off Delay Time
15ns
Turn-On Delay Time
10ns
Weight
0.01164oz
Width
2.38mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFU9110PBF Datasheet
Download the complete datasheet for Vishay IRFU9110PBF to view detailed technical specifications.
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