P-channel Power MOSFET, 100V drain-source voltage, 3.1A continuous drain current, and 1.2 Ohm max drain-source on-resistance. Features include 20V gate-source voltage, 10ns turn-on delay, 15ns turn-off delay, and 17ns fall time. This through-hole component is housed in a TO-251-3 (IPAK) package, offering 2.5W max power dissipation and operating from -55°C to 150°C. RoHS compliant and lead-free.
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Vishay IRFU9110PBF technical specifications.
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 3.1A |
| Drain to Source Resistance | 1.2R |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 1.2R |
| Fall Time | 17ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 6.22mm |
| Input Capacitance | 200pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 1.2R |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | -2V |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.01164oz |
| Width | 2.38mm |
| RoHS | Compliant |
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