P-channel power MOSFET with 400V drain-source voltage and 1.8A continuous drain current. Features 7 Ohm drain-source on-resistance and 20V gate-source voltage. This silicon metal-oxide semiconductor FET is housed in a TO-251-3 package, suitable for through-hole mounting. Includes fast switching characteristics with 11ns turn-on delay and 24ns fall time. Maximum power dissipation is 50W, operating temperature range from -55°C to 150°C. RoHS compliant.
PackageTO-251-3
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Vishay IRFU9310PBF technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 1.8A |
| Drain to Source Resistance | 7R |
| Drain to Source Voltage (Vdss) | 400V |
| Drain-source On Resistance-Max | 7R |
| Fall Time | 24ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 6.22mm |
| Input Capacitance | 270pF |
| Lead Free | Lead Free |
| Lead Length | 9.65mm |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Mount | Through Hole |
| Nominal Vgs | -4V |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Rds On Max | 7R |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | -4V |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 11ns |
| Weight | 0.01164oz |
| Width | 2.38mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFU9310PBF Datasheet
Download the complete datasheet for Vishay IRFU9310PBF to view detailed technical specifications.
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