N-channel MOSFET transistor for through-hole mounting in a TO-220AB package. Features a 50V drain-source voltage (Vdss) and a continuous drain current (ID) of 15A. Offers a low drain-source on-resistance (Rds On) of 100mR at a gate-source voltage (Vgs) of 4V. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 40W. Includes fast switching characteristics with turn-on and fall times of 15ns and turn-off delay of 20ns.
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Vishay IRFZ20PBF technical specifications.
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 15A |
| Drain to Source Resistance | 100mR |
| Drain to Source Voltage (Vdss) | 50V |
| Drain-source On Resistance-Max | 100MR |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.01mm |
| Input Capacitance | 850pF |
| Lead Free | Lead Free |
| Length | 10.41mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 40W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 40W |
| Radiation Hardening | No |
| Rds On Max | 100mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 15ns |
| Weight | 0.211644oz |
| Width | 4.7mm |
| RoHS | Compliant |
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