N-channel MOSFET transistor for through-hole mounting in a TO-220AB package. Features a 50V drain-source voltage (Vdss) and a continuous drain current (ID) of 15A. Offers a low drain-source on-resistance (Rds On) of 100mR at a gate-source voltage (Vgs) of 4V. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 40W. Includes fast switching characteristics with turn-on and fall times of 15ns and turn-off delay of 20ns.
PackageTO-220AB
MountingThrough Hole
PolarityN-CHANNEL
Power40W
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Technical Specifications
Vishay IRFZ20PBF technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
15A
Drain to Source Resistance
100mR
Drain to Source Voltage (Vdss)
50V
Drain-source On Resistance-Max
100MR
Fall Time
15ns
Gate to Source Voltage (Vgs)
20V
Height
9.01mm
Input Capacitance
850pF
Lead Free
Lead Free
Length
10.41mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
40W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
40W
Radiation Hardening
No
Rds On Max
100mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
4V
Turn-Off Delay Time
20ns
Turn-On Delay Time
15ns
Weight
0.211644oz
Width
4.7mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFZ20PBF Datasheet
Download the complete datasheet for Vishay IRFZ20PBF to view detailed technical specifications.
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